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3 edition of Refractive nonlinearity of wide-band semiconductors and applications found in the catalog.

Refractive nonlinearity of wide-band semiconductors and applications

A. A. Borshch

Refractive nonlinearity of wide-band semiconductors and applications

by A. A. Borshch

  • 66 Want to read
  • 9 Currently reading

Published by Harwood Academic Publishers in Chur, New York .
Written in English

    Subjects:
  • Semiconductor lasers.,
  • Semiconductors -- Optical properties.

  • Edition Notes

    Includes bibliographical references p. (133-140).

    StatementA.A. Borshch, M. Brodin, and V. Volkov.
    SeriesLaser science and technology ,, v. 9
    ContributionsBrodin, M. S. 1931-, Volkov, V.
    Classifications
    LC ClassificationsTA1700 .B67 1990
    The Physical Object
    Paginationxiv, 141 p. :
    Number of Pages141
    ID Numbers
    Open LibraryOL2199110M
    ISBN 103718649713
    LC Control Number89019894

    Structure and nonlinear refraction of nanocrystal SiC thin films. nonlinearity of refraction (n. 2 ~ 10 Nonlinearity of Wide-Band Semiconductors and Appli-. character of this response in these media was tightly bound with a refraction index and an energy gap width of nanoparticles material. The re sults of the work (Kul'chin(a) ,

    Abstract. Wide-band-gap semiconductor-doped-glasses were obtained by synthesizing SnO 2:SiO 2 nanostructured glassceramics. In this binary system, comprising two chemically compatible oxides, crystalline SnO2 nanoclusters were embedded in a pure silica matrix in a controlled way, by setting appropriate thermochemical parameters, up to 10% of volume fraction of the semiconductor . Determination of Nonlinear Absorption and Refraction by Single Z-scan Method in Nanostructure Wide Band gap Semiconductor CdS using femtosecond Laser shows negative refractive nonlinearity.

      A giant optical nonlinearity [21–23] in the presence of a strong magnetic field has also been calculated from a density matrix formalism. Third and higher harmonic generations from intraband contributions have been investigated in detail in the THz regime [ 10, 24, 25 ].Cited by: The change in a material’s refractive index grows large as its permittivity grows small, so scientists expect that it becomes optically nonlinear in the “epsilon-near-zero” frequency range. The Rochester researchers probed the oxide material with near-infrared laser pulses and found that its nonlinear response—specifically, the real part of its refractive index—changed by Author: Patricia Daukantas.


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Refractive nonlinearity of wide-band semiconductors and applications by A. A. Borshch Download PDF EPUB FB2

Refractive nonlinearity of wide-band semiconductors and applications. Chur ; New York: Harwood Academic Publishers, © (OCoLC) Document Type: Book: All Authors / Contributors: A A Borshch; M S Brodin; V Volkov. Rent or buy Refractive Nonlinearity of Wide Band Semiconductors and Applications -   In nonlinear super-resolution nanooptics, in order to obtain below diffraction-limited spot, the nonlinear absorption and refraction coefficients of samples are required to be large.

The semiconductor thin films generally possess large nonlinear coefficients due to the manipulations from free-carriers, gap shrinkage, and thermal by: 1. A chapter that describes instabilities in semiconductor lasers concludes the book. This book is intended for research students and active research workers who are interested in the basic physics or in the device applications of optical nonlinearities and instabilities in semiconductors.

For bulk semiconductors, two-photon absorption gives major contribution to refractive nonlinearity at nearly half the bandgap energy. On the other hand, the quadratic optical Stark effect gives the largest input to refractive nonlinearity at the bandgap energy and therefore can greatly enhance nonlinear by: 3.

Nonlinear refractive index and two-photon absorption measurements on semiconductors show that the bound electronic nonlinearity can be calculated from two-photon absorption dispersion via a simple. Wide bandgap semiconductors are electronic materials in which the energy of the band-to-band electronic transitions exceeds approximately 2 eV.

These materials have different kinds of chemical bonds and of crystal lattice structures, but the electronic and optical processes taking place in them have a great deal in by: The existence of optical gain may be exploited to make a laser diode out of a direct band-gap semiconductor such as GaAs or InGaAsP.

When a single-crystal direct band-gap semiconductor heterostructure p–n diode is forward-biased to inject a current, I inj, electrons are introduced into the conduction band and holes into the valence the optically active region of a semiconductor.

Refractive Indices of Semiconductors from Energy gaps S. hy Abstract An empirical relation based on energy gap and refractive index data has been proposed in the present study to calculate the refrac-tive index of semiconductors. The proposed model is then applied to binary as well as ternary semiconductors for a wide range of energy gap.

As mentioned earlier, the net refractive index of a medium with a Kerr nonlinearity can be written as n = n0 + n2I, where n0 is the linear refractive index, n2 is the nonlinear refractive index coefficient, and I is the time-averaged intensity of the optical field.

Upconversion pumping of rare-earth ions in a semiconductor optical medium under particular conditions leads to an increase in the refractive index. The mechanism of the effect observed implies that, upon double or triple excitation by photons with energies less than the band gap, the energy of an Er 3+ ion becomes sufficiently high for Cited by: 1.

Abstract. The aim of this study is to investigate the nonlinearity of refraction in nanostructured silicon carbide films depending on their structural features (synthesis conditions for such films, substrate temperature during their deposition, concentration of the crystalline phase in the film, Si/C ratio of atomic concentrations in the film, and size of SiC nanocrystals formed Cited by: 5.

The theoretical simulation shows that wide bandgap semiconductors with a bandgap greater than eV can suppress solar absorption effectively. The plasma frequency fp should be approximately cm-1 to have enhanced emissivity in the atmospheric window for nanoparticles embedded in medium with electric permittivity of Nonlinearities that are encountered in semiconductors where the index of refraction is altered through charge carriers generated by two-photon absorption (i.e., a sequential χ (3):χ (1) effect) appear as a fifth-order nonlinearity.

Nonlinear refractive indices and nonlinear absorption coefficients of a number of chalcogenide glasses were investigated in Ref. [30]. Such media possess spectrally dependent nonlinear optical parameters. We report the observation of a refractive nonlinearity (-3X10 cm 3) in bulk ZnTe crystal at wavelengths just below the band edge, using nanosecond laser pulses.

A comparison with band-filling theory indicates that the dynamic Burstein-Moss shift should be the mechanism responsible for the observed by: 1. Matsunami (ed.): Technology of Semiconductor SiC and Its Application, The Nikkan Kogyo Shimbun, Tokyo, (in Japanese) Google Scholar 6.

Arai and S. Yoshida: Fundamentals and Applications of SiC Devices, Ohmsha, Tokyo, (in Japanese) Google ScholarCited by:   The z-scan allows direct determination of the nonlinear refraction, γ, and absorption, β, coefficients related to the intensity-dependent, complex effective refractive index of the metamaterial Cited by: This book chapter describes the linear and femtosecond nonlinear optical properties of ferroelectric thin films.

The fundamental optical constants (the linear absorption coefficient, linear refraction index, and bandgap energy) of the thin film Cited by: 2.

Nonlinear refraction in nanocrystalline SiC films, which have been obtained using the method of direct deposition of carbon and silicon ions with an energy of eV at substrate temperatures from to °C, has been investigated. It has been shown that the films exhibit a large third-order nonlinear susceptibility χ (3) ∼ 10−6 esu (at λ = nm and τ p = 10 ns).Cited by: A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text.

Sensitive Measurement of Optical Nonlinearities Using a Single Beam MANSOOR SHEIK-BAHAE, MEMBER, IEEE, ALI A. SAID, TAI-HUE1 WEI, DAVID J. HAGAN, MEMBER, IEEE AND E. w. VAN STRYLAND, SENIOR MEMBER, IEEE Abstract-We report a sensitive single-beam technique for measur- ing both the nonlinear refractive index and nonlinear absorption coef.refraction in wide-gap semiconductors.

The Z-scan measurements are recorded for both ZnO and ZnS with femtosecond laser pulses. While the wavelength dispersions of the Kerr nonlinearity are in agreement with a two-band model, the wavelength dependences of the 3PA are found to be given by –9(3Ephoton/Eg–1) 5/2(3E photon/Eg).

We also.The refractive index determines how much the path of light is bent, or refracted, when entering a is described by Snell's law of refraction, n 1 sinθ 1 = n 2 sinθ 2, where θ 1 and θ 2 are the angles of incidence and refraction, respectively, of a ray crossing the interface between two media with refractive indices n 1 and n refractive indices also determine the .